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  ts m60 n 90 0 60 0v, 4.5a, 0.9 n - channel power mosfet 1 / 9 version: b 14 ito - 220 to - 251 (ipak) key parameter performance parameter value unit v ds 60 0 v r ds(on) (max) 0.9 q g 9.7 nc to - 252 (dpak) features super - junction technology high performance due to small figure - of - merit high ruggedn ess performance high commutation performance block diagram n - channel mosfet application power supply. lighting ordering information part no. package packing tsm 60 n 90 0 c i c0g i to - 2 20 50 pcs / tube tsm 60 n 90 0 c h c5g to - 2 51 75 pcs / tube tsm 60 n 90 0 c p rog to - 2 52 2.5kpcs / 13 reel note: g denotes for halogen - and antimony - free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds absolute maximum rating s ( t c = 25 c unless otherwise noted ) par ameter symbol limit unit ito - 220 ipak/dpak drain - source voltage v ds 6 00 v gate - source voltage v gs 3 0 v continuous drain current (note 1 ) t c = 25 c i d 4.5 a pulsed drain current (note 2 ) i dm 13.5 a total power dissipation @ t c = 25 c p dtot 2 0 50 w single pulsed avalanche energy (note 3 ) e as 81 mj single pulsed avalanche current (note 3 ) i as 1. 8 a operating junction and storage temperature range t j , t stg - 55 to +1 50 c pin definition : 1. gate 2. drain 3. s ource
ts m60 n 90 0 60 0v, 4.5a, 0.9 n - channel power mosfet 2 / 9 version: b 14 thermal performance parameter symbol limit unit ito - 2 2 0 ipak/dpak junc tion to case thermal resistance r ? jc 6.25 2.5 c /w junction to ambient thermal resistance r ? ja 62 c /w electrical specifications ( t c = 25 c unless otherwise noted ) parameter conditions symbol min typ max u nit static (note 4 ) drain - source breakdown vol tage v gs = 0 v, i d = 250 a bv dss 6 00 -- -- v gate threshold voltage v ds = v gs , i d = 250a v gs(th) 2 3 4 v gate body leakage v gs = 3 0 v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 6 0 0v, v gs = 0v i dss -- -- 1 a drain - source on - stat e resistance v gs = 10v, i d = 2.3 a r ds(on) -- 0.7 2 0.9 (note 5 ) total gate charge v ds = 3 8 0 v, i d = 2.3 a, v gs = 10 v q g -- 9. 7 -- nc gate - source charge q gs -- 2.3 -- gate - drain charge q gd -- 3. 6 -- input capacitance v ds = 100 v, v gs = 0v, f = 1.0mhz c iss -- 480 -- pf output capacitance c os s -- 36 -- g ate resistance f=1 mhz , open drain r g -- 3.4 -- (note 6 ) turn - on delay time v dd = 3 8 0v, r gen = 4.7 d = 2.3 a, v gs = 10v, t d(on) -- 12 -- ns turn - on rise time t r -- 1 6 -- turn - off delay time t d(off) -- 2 2 -- turn - of f fall time t f -- 1 2 -- source - drain diode (note 4 ) forward on voltag e i s = 4.5 a, v gs =0v v sd - - - - 1. 4 v r everse recovery time v r = 20 0v, i s = 2.3 a di f /dt=100a/ rr -- 179 -- ns r everse recovery charge q rr -- 1. 2 -- as = 1.8 a, v dd = 50 v, r g =25, start ing t j = 25 c 4. p ulse test: pw 300s , d u ty cycle 2% 5. for design aid only, not subject to production testing. 6. switching time is essentially independent of operating temperature.
ts m60 n 90 0 60 0v, 4.5a, 0.9 n - channel power mosfet 3 / 9 version: b 14 electrical characteristics curve s output characteristics transfer characteristics on - resistance vs. drain current gate charge vs . gate - source voltage on - resistance vs. junction temperature source - drain diode forward voltage vs. current
ts m60 n 90 0 60 0v, 4.5a, 0.9 n - channel power mosfet 4 / 9 version: b 14 electrical characteristics curve s capacitance vs. drain - source voltage bv dss vs. junction temperature maximum safe operating are a (dpak/ipak) maximum safe operating area (ito - 220)
ts m60 n 90 0 60 0v, 4.5a, 0.9 n - channel power mosfet 5 / 9 version: b 14 electrical characteristics curve s normalized thermal transient impedance, junction - to - case (dpak/ipak) normalized thermal transient impedance, junction - to - case (ito - 220) 10 - 4 10 - 3 10 - 2 10 - 1 10 0 norma lized effective transient thermal impedance 10 - 7 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 square wave pulse duration (s) 10 - 4 10 - 3 10 - 2 10 - 1 10 0 normalized effective transient thermal impedance 10 - 7 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 s quare wave pulse duration (s ) 10 1 duty=0.5 duty=0.2 duty=0.1 duty=0.05 duty=0.02 duty=0.01 s ingle pulse duty=0.5 duty=0.2 duty=0.1 duty=0.05 duty=0.02 duty=0.01 s ingle pulse
ts m60 n 90 0 60 0v, 4.5a, 0.9 n - channel power mosfet 6 / 9 version: b 14 ito - 220 mechanical drawing unit: millimeters marking diagram g = halogen free y = year code ww = week code (01~52) f = factory code
ts m60 n 90 0 60 0v, 4.5a, 0.9 n - channel power mosfet 7 / 9 version: b 14 to - 251 (ipak) mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
ts m60 n 90 0 60 0v, 4.5a, 0.9 n - channel power mosfet 8 / 9 version: b 14 to - 252 (dpak) mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
ts m60 n 90 0 60 0v, 4.5a, 0.9 n - channel power mosfet 9 / 9 version: b 14 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and a gree to fully indemnify tsc for any damages resulting from such improper use or sale.


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